¹⁾ United Microwave Laboratory, Saint Petersburg Electrotechnical University, 5 Prof. Popov str.,
 St. Petersburg, 197376, Russia
²⁾ Centre for Physical Electronics and Materials, London South Bank University, 103 Borough Road, London SE1 0AA, UK

Abstract – A frequency tunable microwave filter based on a dual mode dielectric resonator has been developed. Tuning of the filter was realized by using metal plate located over the dielectric resonator and moved along the resonator axis by a piezoelectric bimorph. The main parameters of the filter are the following: central frequency of the tuning range 2.35 GHz, bandwidth for 1dB level 0.5%, tuning range about 10%, the insertion loss less then 1dB.

Dept. of Microperipherik, Faculty of Electrical Engineering and Information Technology,  Ilmenau Technical
University, PF 100565, 98694, Ilmenau, Germany

Abstract – Planar as well as 3-D- inductors were simulated, manufactured, measured and modeled. The structures were manufactured with different shapes, a line width from 30 μm to 80 μm, a space between windings from 100 μm and 200 μm and diameters of inner windings from 0.5 mm to 2 mm. The smaller and more critical inductors (0.5 mm diameter) were manufactured with vias, whose diameter were about 60 μm.
The manufacturing of smaller coils was possible due to the increased resolution of Fodel® thick film inks in combination with microvias. Combining these technologies we obtained thick-film inductors that can be used in a wider range of frequencies (up to 5 GHz or higher).

Dept. of Microelectronics & Radio Engineering, St.-Petersburg Electrotechnical University, 5, Prof. Popov Str., St.-Petersburg 197376 Russia.

Abstract – An original design of a microwave wideband filter is presented. The filter is composed of parallel-coupled microstrip resonators on the top side of dielectric substrate and an aperture on the bottom side. The filter with the central frequency of 2.1 GHz and the  fractional bandwidth 40% has been designed.

Radiophysics faculty, Saint-Petersburg Polytechnic University, 29 Polytekhnicheskaya st., 195251, Saint-Petersburg, Russia

Abstract – A nonlinear FET model, including approximating voltage dependencies of drain current, gate–source capacitance and resistance is considered. The technique based on the harmonic balance for the calculation of stationary oscillation is described. A new parametric synthesis method of microwave oscillator with “star-like” structure is proposed. This method enables to get automatically necessary frequency and power. The PC program for the design of integrated microwave FET oscillators is described.

Dept. of Microelectronics & Radio Engineering, St. Petersburg Electrotechnical University, 5 Prof. Popov St., 197376, St. Petersburg, Russia

Abstract – The paper presents the three-pole microstrip bandpass filter without second spurious passband, which was suppressed by additional capacitors placed between resonators. The filter layout and simulation results are presented and discussed.