Dept. of Microelectronics & Radio Engineering, St.-Petersburg Electrotechnical University, 5 Prof. Popov st., 197376, St. Petersburg, Russia.

Abstract – Design of front-end passive devices for Bluetooth and WLAN applications are presented. The devices of a small size have been realized using LTCC and multilayer "sandwich" technology and revealed a high performance.

Dept. of Microelectronics & Radio Engineering, St.-Petersburg Electrotechnical University, 5 Prof. Popov st., 197376, St. Petersburg, Russia.

Abstract – Possibilities of using multilayer "sandwich" technology for microwave applications are investigated. Various passive structures have been simulated, fabricated and measured. Simulated data are presented in a comparison with experimental results.

¹⁾ Dept. for RF and Microwave Techniques, ²⁾ Electronics Technology and Microperipheric Group. Faculty for Electrical Engineering and Information Technology, Technische Universitдt Ilmenau, P.O. Box
100565, 98684 Ilmenau, Germany.

Abstract – We develop a 4Ч4 single-pole multi-throw switch matrix in LTCC technology, for satellite applications at 17-22 GHz. The matrix incorporates passive circuits and switches, including biasing and decoupling networks, which enable digitally controlled reconfiguration. In a first attempt, we have designed a test chip to characterise different types of switches, and to identify the limits of the technology. The scattering
parameters measured for a 11-layer structure with 4 layers containing RF signal lines and minimum line widths of 40 mm prove the principle-of-operation. The results illustrate the potential of our approach and indicate routes to optimise the RF design.

Radiophysics faculty, Saint-Petersburg Polytechnic University, 29 Polytekhnicheskaya st., 195251, Saint-Petersburg, Russia

Abstract – A nonlinear FET model, including approximating voltage dependencies of drain current, gate–source capacitance and resistance is considered. The technique based on the harmonic balance for the calculation of stationary oscillation is described. A new parametric synthesis method of microwave oscillator with “star-like” structure is proposed. This method enables to get automatically necessary frequency and power. The PC program for the design of integrated microwave FET oscillators is described.

Dept. of Microperipherik, Faculty of Electrical Engineering and Information Technology,  Ilmenau Technical
University, PF 100565, 98694, Ilmenau, Germany

Abstract – Planar as well as 3-D- inductors were simulated, manufactured, measured and modeled. The structures were manufactured with different shapes, a line width from 30 μm to 80 μm, a space between windings from 100 μm and 200 μm and diameters of inner windings from 0.5 mm to 2 mm. The smaller and more critical inductors (0.5 mm diameter) were manufactured with vias, whose diameter were about 60 μm.
The manufacturing of smaller coils was possible due to the increased resolution of Fodel® thick film inks in combination with microvias. Combining these technologies we obtained thick-film inductors that can be used in a wider range of frequencies (up to 5 GHz or higher).