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Proceedings of Conferences arrow Session 3 "Ferroelectrics at Microwaves"
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The temperature dependence of the capacitance of a planar capacitor containing layered BSTO structur (141.98 Kbytes) hot! 2004-06-29
The temperature dependence of the capacitance of a planar capacitor containing layered BSTO structures

N. U. Nekrasova

Dept. of Electronics, St.-Petersburg Electrotechnical University, 5 Prof. Popov st., 197376, St. Petersburg, Russia

Introduction 
    The dielectric nonlinearity of ferroelectrics makes it possible to elaborate electrically tunable microwave devices and components. BaxSr1-xTiO3 (BSTO) is a typical ferroelectric material suitable for microwave application at room temperature [1]. 
    According to the theory of ferroelectricity, the temperature dependence of the dielectric permittivity ε(T) of a homogeneous BSTO sample obeys the Curie-Weiss law [2]. The measurements of BSTO planar capacitors revealed that the observed experimental temperature dependence ε(T) did not follow this law. In order to explain this anomalous behavior of the capacitance, it is supposed that the investigated BSTO films consist of layers with different phase transition temperatures, which correspond to the different barium concentration across the BSTO film profile.

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The influence of synthesis temperature on structure properties of BaXSr1-XTiO3 ferroelectric films (149.8 Kbytes) hot! 2004-06-29
The influence of synthesis temperature on structure properties of BaXSr1-XTiO3 ferroelectric films

A. K. Mikhailov, A. V. Tumarkin, and S. V. Razumov

Dept. of Electronics, St.-Peterburg Electrotechnical University, 5 Prof. Popov st., 197376, St.-Peterburg, Russia

Abstract – The results of structure investigations of (Ba,Sr)TiO3 films depending on synthesis temperature are presented. Electrical characteristics of planar capacitors based on prepared films are investigated. Finally, the technological conditions of high structure quality (Ba,Sr)TiO3 films preparation are determined. (Ba,Sr)TiO3 films prepared under those conditions possess electrical characteristics sufficient for room temperature microwave applications in a wide frequency range.

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